The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Feb. 11, 2005
Nobuhiko Hayashi, Osaka, JP;
Takashi Kano, Hirakata, JP;
Nobuhiko Hayashi, Osaka, JP;
Takashi Kano, Hirakata, JP;
Sanyo Electric Co. Ltd., Osaka, JP;
Abstract
A GaN layer is grown on a sapphire substrate, an SiOfilm is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiOfilm using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiOfilm, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiOfilm, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.