The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Mar. 16, 2005
Takashi Kano, Hirakata, JP;
Tsutomu Yamaguchi, Nara, JP;
Hiroaki Izu, Hirakata, JP;
Masayuki Hata, Kadoma, JP;
Yasuhiko Nomura, Moriguchi, JP;
Takashi Kano, Hirakata, JP;
Tsutomu Yamaguchi, Nara, JP;
Hiroaki Izu, Hirakata, JP;
Masayuki Hata, Kadoma, JP;
Yasuhiko Nomura, Moriguchi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.