The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Sep. 17, 2003
Yasuhiko Nomura, Moriguchi, JP;
Daijiro Inoue, Kyoto, JP;
Masayuki Hata, Kadoma, JP;
Takashi Kano, Hirakata, JP;
Yasuhiko Nomura, Moriguchi, JP;
Daijiro Inoue, Kyoto, JP;
Masayuki Hata, Kadoma, JP;
Takashi Kano, Hirakata, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of either a nitride-based semiconductor doped with an impurity or a boride-based material, an n-type cladding layer formed on the substrate, an active layer consisting of a nitride-based semiconductor formed on the n-type cladding layer, a p-type cladding layer formed on the active layer and a light guide layer formed only between the active layer and the p-type cladding layer in the interspaces between the active layer and the n- and p-type cladding layers.