The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2011
Filed:
Dec. 17, 2002
Applicants:
Tatsuya Kunisato, Takatsuki, JP;
Takashi Kano, Ohtsu, JP;
Yasuhiro Ueda, Hirakata, JP;
Yasuhiko Matsushita, Osaka, JP;
Katsumi Yagi, Suita, JP;
Inventors:
Tatsuya Kunisato, Takatsuki, JP;
Takashi Kano, Ohtsu, JP;
Yasuhiro Ueda, Hirakata, JP;
Yasuhiko Matsushita, Osaka, JP;
Katsumi Yagi, Suita, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2005.12);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.