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For the Inventor, By the Inventor

Inagi, Japan

Takashi Eshita

USPTO Granted Patents = 17

Average Co-Inventor Count = 2.8

ph-index = 12

Forward Citations = 324(Granted Patents)


Location History:

  • Ohmorinishi, JP (1991 - 1992)
  • Tokyo, JP (1991 - 1993)
  • Inagi, JP (1989 - 1996)
  • Kawasaki, JP (1995 - 2001)

Company Filing History:

goldMedal16 out of 39,228 
 
Fujitsu Corporation
 patents
silverMedal1 out of 3 
 
501 Fujitsu Limited
 patents

Years Active: 1989-2001

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17 patents (USPTO):Explore Patents
1. 6191441 - Ferroelectric memory device and its drive method (2001-02-20),
2. 6188090 - Semiconductor device having a heteroepitaxial substrate (2001-02-13),
3. 6046929 - Memory device with two ferroelectric capacitors per one cell (2000-04-04),
4. 5834362 - Method of making a device having a heteroepitaxial substrate (1998-11-10),
5. 5518937 - Semiconductor device having a region doped to a level exceeding the (1996-05-21),
6. 5402748 - Method of growing a compound semiconductor film (1995-04-04),
7. 5270224 - Method of manufacturing a semiconductor device having a region doped to (1993-12-14),
8. 5144379 - Semiconductor device having a group III-V epitaxial semiconductor layer (1992-09-01),
9. 5111266 - Semiconductor device having a region doped to a level exceeding the (1992-05-05),
10. 5103285 - Silicon carbide barrier between silicon substrate and metal layer (1992-04-07),
11. 5082695 - Method of fabricating an X-ray exposure mask (1992-01-21),
12. 5057880 - Semiconductor device having a heteroepitaxial substrate (1991-10-15),
13. 5019874 - Semiconductor device having an epitaxial layer grown heteroepitaxially (1991-05-28),
14. 4997787 - Method for fabricating a semiconductor film which is electrically (1991-03-05),
15. 4994413 - Method of manufacturing a semiconductor device having a silicon carbide (1991-02-19),

Title: The Innovative Mind of Takashi Eshita

Introduction

Takashi Eshita is a prominent inventor based in Inagi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on advancing memory devices and semiconductor fabrication methods.

Latest Patents

Eshita's latest patents include a ferroelectric memory device and its drive method. This innovative memory device is capable of writing data at a small operation voltage and features an insulated-gate field effect transistor, a ferroelectric film, and a pair of capacitor electrodes. One of the capacitor electrodes is electrically connected to the insulated gate, allowing for a simple structure. Another notable patent involves a semiconductor device with a heteroepitaxial substrate. This method fabricates a compound semiconductor device by depositing multiple layers of group III-V compound semiconductors on a silicon substrate at varying temperatures.

Career Highlights

Throughout his career, Takashi Eshita has worked with notable companies such as Fujitsu Corporation and Fujitsu Limited. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Eshita has collaborated with talented individuals in the field, including Fumitake Mieno and Yuji Furumura. These partnerships have contributed to the advancement of his projects and patents.

Conclusion

Takashi Eshita's contributions to semiconductor technology and memory devices highlight his innovative spirit and dedication to advancing the field. His numerous patents reflect his expertise and commitment to creating efficient and effective solutions.

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