The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Mar. 31, 1999
Applicant:
Inventors:
Masaki Aoki, Kawasaki, JP;
Akio Itoh, Kawasaki, JP;
Mitsuteru Mushiga, Kawasaki, JP;
Ko Nakamura, Kawasaki, JP;
Takashi Eshita, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365149 ;
Abstract
The source region and gate electrode of a field effect transistor including a drain region and a gate electrode in addition to the source region are connected by a first ferroelectric capacitor. The drain region and gate electrode are connected by a second ferroelectric capacitor. A ferroelectric memory device suitable for high integration is provided.
Aoki, Masaki. (2000). Memory device with two ferroelectric capacitors per one cell (U.S. Patent No. 6046929). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6046929
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile