The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1991
Filed:
Dec. 06, 1989
Takashi Eshita, Inagi, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method for fabricating a crystal imperfection free silicon carbide (SiC) film electrically insulated from silicon substrate. A SiC film is heteroepitaxially grown over a silicon substrate, and set into a jig made of Teflon. The jig holds the substrate by its periphery, and exposes the bottom surface of the substrate which is opposite to the SiC film. The semiconductor substrate is etched off from its bottom side, and the lower surface of the SiC film is exposed. Silicon dioxide film is deposited to the lower surface of the SiC film and a second silicon substrate is adhered to the silicon dioxide film by applying pulse voltage. The surface of the SiC film fabricated in this way is never contacted to the silicon substrate, therefore, it is free from the crystal imperfections which occurs close to the contact surface to the silicon substrate. Accordingly, the SiC film formed in such a way is desirable for fabricating semiconductor devices.