The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Oct. 12, 1989
Applicant:
Inventor:
Takashi Eshita, Inagi, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437244 ; 437100 ; 437 31 ; 437 41 ; 437 62 ; 148D / ; 357 16 ;
Abstract
A method of forming a semiconductor device on a silicon carbide layer comprises steps of introducing an impurity into selected parts of the silicon carbide layer, and oxidizing the silicon carbide layer by annealing in an atmosphere containing oxygen.