Location History:
- Yokkaichi, JP (2015)
- Mie, JP (2015 - 2018)
- Shiga, JP (2020)
Company Filing History:
7 out of 1,310 
1 out of 1,530 
1 out of 36 
Years Active: 2015-2020
Title: Takaaki Miyasako: Innovator in Thin Film Transistors and Dielectric Layers
Introduction
Takaaki Miyasako is a prominent inventor based in Mie, Japan, known for his significant contributions to the field of semiconductor technology. He holds a total of seven patents, showcasing his innovative approach to manufacturing processes and materials in electronics.
Latest Patents
Miyasako's latest patents include a method for manufacturing thin film transistors with oxide semiconductor channels. This invention features a thin film transistor that comprises a gate electrode, a channel, and a gate insulating layer made of oxide containing lanthanum and zirconium. The channel is constructed from channel oxide, which includes various oxides with specific atomic ratios of indium, zinc, and zirconium. Additionally, he has developed a dielectric layer with high relative permittivity and low leakage current, made from multilayer oxides that enhance the performance of solid-state electronic devices.
Career Highlights
Throughout his career, Miyasako has worked with notable organizations such as the Japan Science and Technology Agency and Mitsubishi Materials Corporation. His work has significantly impacted the development of advanced materials and manufacturing techniques in the electronics industry.
Collaborations
Miyasako has collaborated with esteemed colleagues, including Tatsuya Shimoda and Eisuke Tokumitsu, contributing to various innovative projects and research initiatives.
Conclusion
Takaaki Miyasako's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic materials and manufacturing processes.