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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9293257 B1

PDFFull Text
Date of Patent:
Mar. 22, 2016

Filed:

Oct. 25, 2012

Solid-state electronic device including dielectric bismuth niobate film formed from solution

Applicant:

Japan Science and Technology Agency, Saitama, JP;

Inventors:

Tatsuya Shimoda, Ishikawa, JP;

Eisuke Tokumitsu, Ishikawa, JP;

Masatoshi Onoue, Chicago, IL (US);

Takaaki Miyasako, Mie, JP;

Assignee:

Japan Science and Technology Agency, Saitama, JP;

Attorney:

Seed IP Law Group PLLC

Primary Examiner:

Colleen A Matthews

Assistant Examiner:

Regan J Rundio

Int. Cl.
CPC ...
C01G 29/00 (2006.01); C01G 33/00 (2006.01); H01G 4/30 (2006.01); H01G 4/12 (2006.01); B05D 5/12 (2006.01); H01L 21/02 (2006.01); H01L 29/84 (2006.01); H01L 49/02 (2006.01); H01L 27/01 (2006.01); B81C 1/00 (2006.01); B81B 7/00 (2006.01); H01L 21/768 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1254 (2013.01); H01G 4/1263 (2013.01); H01G 4/306 (2013.01); H01L 21/02205 (2013.01); H01L 21/02288 (2013.01); H01L 27/016 (2013.01); H01L 28/40 (2013.01); H01L 29/84 (2013.01); H01L 21/02282 (2013.01); H01L 21/31691 (2013.01); H01L 21/76817 (2013.01);
Abstract

A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.

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