Eisuke Tokumitsu

Title: Innovations of Eisuke Tokumitsu

Introduction

Eisuke Tokumitsu is a notable inventor based in Ishikawa, Japan. He has made significant contributions to the field of solid-state electronic devices and dielectric materials. With a total of four patents to his name, his work focuses on enhancing the performance and efficiency of electronic components.

Latest Patents

Tokumitsu's latest patents include a dielectric layer and a manufacturing method for this layer, as well as a solid-state electronic device and its manufacturing method. The dielectric layer he developed boasts high relative permittivity, low leakage current, and excellent flatness. This layer is composed of a multilayer oxide, which includes a first oxide layer made from bismuth (Bi) and niobium (Nb) or a combination of bismuth (Bi), zinc (Zn), and niobium (Nb). The second oxide layer is selected from a group that includes lanthanum (La) and tantalum (Ta), lanthanum (La) and zirconium (Zr), or strontium (Sr) and tantalum (Ta). His solid-state electronic device features a bismuth niobate film formed from a precursor solution, which is heated in an oxygen-rich atmosphere to create an oxide layer consisting of bismuth (Bi) and niobium (Nb).

Career Highlights

Eisuke Tokumitsu is affiliated with the Japan Science and Technology Agency, where he continues to innovate and develop new technologies. His work has been instrumental in advancing the field of electronics, particularly in the area of dielectric materials.

Collaborations

He has collaborated with notable coworkers, including Takaaki Miyasako and Tatsuya Shimoda, contributing to various projects and research initiatives.

Conclusion

Eisuke Tokumitsu's contributions to the field of solid-state electronics and dielectric materials highlight his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving electronic device performance, making him a significant figure in his field.