The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9876067 B1

Date of Patent:

Jan. 23, 2018

Filed:

Mar. 12, 2014

Dielectric layer and manufacturing method of dielectric layer, and solid-state electronic device and manufacturing method of solid-state electronic device

Applicant:

Japan Science and Technology Agency, Saitama, JP;

Inventors:

Tatsuya Shimoda, Ishikawa, JP;

Eisuke Tokumitsu, Ishikawa, JP;

Masatoshi Onoue, Evanston, IL (US);

Takaaki Miyasako, Mie, JP;

Assignee:

JAPAN SCIENCE AND TECHNOLOGY AGENCY, Saitama, JP;

Attorney:

Primary Examiner:

Tuan Nguyen

Int. Cl.

CPC ...

H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 29/51 (2006.01);

U.S. Cl.

CPC ...

H01L 28/40 (2013.01); H01L 21/022 (2013.01); H01L 21/02194 (2013.01); H01L 21/02205 (2013.01); H01L 21/02269 (2013.01); H01L 28/56 (2013.01); H01L 28/60 (2013.01); H01L 28/87 (2013.01); H01L 28/91 (2013.01); H01L 29/513 (2013.01);

Abstract

The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layeraccording to the invention is made of multilayer oxide including a first oxide layermade of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layermade of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta).

Find Patent Forward Citations

Shimoda, Tatsuya. (2018). Dielectric layer and manufacturing method of dielectric layer, and solid-state electronic device and manufacturing method of solid-state electronic device (U.S. Patent No. 9876067). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9876067

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