The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Dec. 20, 2012
Japan Science and Technology Agency, Saitama, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Mitsubishi Materials Electronic Chemicals Co., Ltd., Akita, JP;
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Saitama, JP;
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD., Akita, JP;
Abstract
An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor () of the present invention includes a first oxide layer (possibly containing inevitable impurities) () consisting of lanthanum (La) and tantalum (Ta), which has a surface () formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode () and a channel (). Moreover, in the thin film transistor, the surface () of the first oxide layer () is in contact with the channel ().