The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Mar. 18, 2013
Japan Science and Technology Agency, Saitama, JP;
Tatsuya Shimoda, Ishikawa, JP;
Satoshi Inoue, Ishikawa, JP;
Tue Trong Phan, Ishikawa, JP;
Takaaki Miyasako, Mie, JP;
Jinwang Li, Ishikawa, JP;
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Saitama, JP;
Abstract
A thin film transistoraccording to the invention includes a gate electrode, a channel, and a gate insulating layerprovided between the gate electrodeand the channeland made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channelis made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.