Hitachi, Japan

Taichiroo Konno

This inventor holds 25 USPTO granted patents and 1 published patent application, primarily in Nitride Semiconductor Technology. Top assignees: Hitachi Cable, Inc., Hitachi Metals, Ltd., Sumitomo Chemical Company, Limited. Active years: 2007-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taichiroo Konno. Retrieved from https://idiyas.com/inventor/taichiroo-konno

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 36.0

Average Co-Inventor Count = 2.1

ph-index = 5

Forward Citations = 82(Granted Patents)


Location History:

  • Tsuchiura, JP (2007 - 2009)
  • Tokyo, JP (2010)
  • Hitachi, JP (2009 - 2019)

Company Filing History:


Years Active: 2007-2019

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Areas of Expertise:
Nitride Semiconductor
Epitaxial Wafer
Light-Emitting Diode
Gas Generator
Crystal Growth
Seed Crystal
Freestanding Substrate
Transparent Conductive Film
High Brightness
Low Operating Voltage
Oxygen-Doped Layer
Silicon-Doped Layer
25 patents (USPTO):Explore Patents

Title: Taichiroo Konno: Innovator in Semiconductor Technology

Introduction

Taichiroo Konno, based in Hitachi, Japan, is a prominent inventor known for his significant contributions to semiconductor technology. With a remarkable portfolio comprising 25 patents, Konno has established himself as a leader in the development of advanced materials and processes in the field of nitride semiconductors.

Latest Patents

Among his latest patents, Konno has developed a metal chloride gas generator, which plays a crucial role in chemical processes for semiconductor manufacturing. Additionally, he has created a hydride vapor phase epitaxy growth apparatus, facilitating the growth of high-quality nitride semiconductor crystals. A notable accomplishment is his patent for a nitride semiconductor template, which includes a substrate and a chlorine-containing nitride semiconductor layer. This layer features an iron concentration of no higher than 1×10 cm, significantly enhancing the performance of semiconductor devices. Furthermore, he has patented a method for producing nitride semiconductor crystals by growing them over a seed crystal substrate while applying an etching action to the substrate's outer end during the growth process.

Career Highlights

Konno's professional journey includes notable tenures at Hitachi Cable, Inc. and Hitachi Metals, Ltd. His work at these companies has been instrumental in advancing semiconductor technologies and strengthening Japan's position in the global semiconductor market. His inventions reflect a deep understanding of material science and engineering, leading to innovations that are critical to modern electronic devices.

Collaborations

Throughout his career, Taichiroo Konno has collaborated with esteemed colleagues such as Masahiro Arai and Hajime Fujikura. These partnerships have fostered a dynamic environment for research and development, allowing for the cross-pollination of ideas and expertise in semiconductor technology.

Conclusion

Taichiroo Konno stands as a pivotal figure in the realm of semiconductor innovation, with his extensive experience and groundbreaking patents setting benchmarks in the industry. His contributions continue to pave the way for advancements that will shape the future of technology and electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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