The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Apr. 03, 2015
Applicant:
Hitachi Metals, Ltd., Tokyo, JP;
Inventors:
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66212 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01);
Abstract
There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.