The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Dec. 13, 2012
Applicant:
Hitachi Cable, Ltd., Tokyo, JP;
Inventors:
Taichiroo Konno, Hitachi, JP;
Hajime Fujikura, Mito, JP;
Assignee:
Hitachi Metals, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 29/36 (2006.01); H01L 33/02 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/325 (2013.01);
Abstract
A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer formed on the substrate and including a Si-doped layer doped with Si as an uppermost layer thereof. The group III nitride semiconductor layer has a total thickness of not less than 4 μm and not more than 10 μm. The Si-doped layer includes a Si concentration gradient layer having a carrier concentration that gradually decreases toward an outermost surface thereof so as to be not less than 1×10cmand not more than 5×10cmat the outermost surface of the group III nitride semiconductor layer.