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For the Inventor, By the Inventor

Fremont, CA, United States of America

Taeseung Kim

USPTO Granted Patents = 13 

Average Co-Inventor Count = 5.2

ph-index = 8

Forward Citations = 267(Granted Patents)


Location History:

  • San Jose, CA (US) (2017)
  • Fremont, CA (US) (2017 - 2023)

Company Filing History:

goldMedal13 out of 3,768 
 
Lam Research Corporation
 patents

Years Active: 2017-2024

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13 patents (USPTO):
1. 12131909 - Selective processing with etch residue-based inhibitors (2024-10-29),
2. 11823909 - Selective processing with etch residue-based inhibitors (2023-11-21),
3. 10749103 - Dry plasma etch method to pattern MRAM stack (2020-08-18),
4. 10566213 - Atomic layer etching of tantalum (2020-02-18),
5. 10515816 - Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) (2019-12-24),
6. 10374144 - Dry plasma etch method to pattern MRAM stack (2019-08-06),
7. 10186426 - Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch) (2019-01-22),
8. 10103056 - Methods for wet metal seed deposition for bottom up gapfill of features (2018-10-16),
9. 10096487 - Atomic layer etching of tungsten and other metals (2018-10-09),
10. 9837312 - Atomic layer etching for enhanced bottom-up feature fill (2017-12-05),
11. 9806252 - Dry plasma etch method to pattern MRAM stack (2017-10-31),
12. 9805941 - Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) (2017-10-31),
13. 9576811 - Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) (2017-02-21),

Title: Taeseung Kim: Innovator in Semiconductor Technology

Introduction

Taeseung Kim is a prominent inventor based in Fremont, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His innovative work focuses on selective processing techniques that enhance the efficiency and effectiveness of semiconductor manufacturing.

Latest Patents

One of Taeseung Kim's latest patents involves selective processing with etch residue-based inhibitors. This patent describes a method for selective deposition of a sacrificial material on a semiconductor substrate. The substrate features a surface with various regions of substrate materials that exhibit different selectivities for the sacrificial material. The process allows for substantial deposition of the sacrificial material on a designated region while preventing significant deposition on another region. Following this, a non-sacrificial material is deposited, ensuring that it primarily adheres to the previously untouched region. The sacrificial material is then removed, resulting in net deposition of the non-sacrificial material on the intended area.

Career Highlights

Taeseung Kim is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. His work at Lam Research has positioned him as a key player in advancing semiconductor manufacturing technologies. His expertise and innovative approaches have contributed to the company's reputation for excellence in the field.

Collaborations

Throughout his career, Taeseung Kim has collaborated with several talented individuals, including Samantha SiamHwa Tan and Jeffrey S Marks. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Taeseung Kim's contributions to semiconductor technology through his patents and work at Lam Research Corporation highlight his role as an influential inventor in the industry. His innovative methods continue to shape the future of semiconductor manufacturing.

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