The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Mar. 08, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Samantha Tan, Fremont, CA (US);

Boris Volosskiy, San Jose, CA (US);

Taeseung Kim, Fremont, CA (US);

Praveen Nalla, Fremont, CA (US);

Novy Tjokro, Fremont, CA (US);

Artur Kolics, Dublin, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76874 (2013.01); H01L 21/76864 (2013.01); H01L 21/76867 (2013.01);
Abstract

A method of depositing a metal seed for performing bottom-up gapfill of features of a substrate includes providing a substrate including a plurality of features; flowing a dilute metal precursor solution into the features, wherein the dilute metal precursor solution includes a metal precursor and a dilution liquid; evaporating the dilution liquid to locate the metal precursor at bottoms of the plurality of features; exposing the substrate to a plasma treatment to reduce the metal precursor to at least one of a metal or a metal alloy and to form a seed layer; performing a heat treatment on the substrate; and using a selective gapfill process to fill the features with a transition metal in contact with the seed layer.


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