The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Sep. 28, 2017
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Samantha Tan, Fremont, CA (US);
Taeseung Kim, Fremont, CA (US);
Wenbing Yang, Fremont, CA (US);
Jeffrey Marks, Saratoga, CA (US);
Thorsten Lill, Santa Clara, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/47 (2013.01); H01L 27/22 (2006.01); C23F 1/12 (2006.01); C23F 4/00 (2006.01); H01J 37/32 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 41/47 (2013.01); C23F 1/12 (2013.01); C23F 4/00 (2013.01); H01J 37/32082 (2013.01); H01J 37/32422 (2013.01); H01J 37/32651 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01);
Abstract
Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.