The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Aug. 17, 2016
Lam Research Corporation, Fremont, CA (US);
Wenbing Yang, Fremont, CA (US);
Samantha Tan, Fremont, CA (US);
Keren Jacobs Kanarik, Los Altos, CA (US);
Jeffrey Marks, Saratoga, CA (US);
Taeseung Kim, Fremont, CA (US);
Meihua Shen, Fremont, CA (US);
Thorsten Lill, Santa Clara, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the atomic level, with etching a low as 1 Å to 10 Å per cycle in some embodiments. In some embodiments, directional control is provided without damage to the surface of interest. The methods may include cycles of a modification operation to form a reactive layer, followed by a removal operation to etch only this modified layer. The modification is performed without spontaneously etching the surface of the metal.