The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Oct. 05, 2016
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Samantha Tan, Fremont, CA (US);
Taeseung Kim, Fremont, CA (US);
Jengyi Yu, San Ramon, CA (US);
Praveen Nalla, Fremont, CA (US);
Novy Tjokro, Union City, CA (US);
Artur Kolics, Dublin, CA (US);
Keren Jacobs Kanarik, Los Altos, CA (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01); C23C 18/16 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23C 18/1628 (2013.01); C23C 18/1632 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32889 (2013.01); H01J 37/32899 (2013.01); H01J 37/32926 (2013.01); H01L 21/3065 (2013.01); H01L 21/32136 (2013.01); H01J 2237/334 (2013.01);
Abstract
Atomic layer etching (ALE) enables effective filling of small feature structures on semiconductor and other substrates, such as contacts and vias, by bottom-up fill, for example electroless deposition (ELD) of cobalt.