Yorktown Heights, NY, United States of America

Szu-Lin Cheng

USPTO Granted Patents = 14 (Patent Applications = 3)

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 28(Granted Patents)

Company Filing History:

9 out of 164,108

International Business Machines Corporation

Years Active: 2015-2019

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10170609 - Internal spacer formation from selective oxidation for Fin-first wire-last replacement gate-all-around nanowire FET (2019-01-01),

2. 10170608 - Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET (2019-01-01),

3. 9917057 - Mixed lithography approach for E-beam and optical exposure using HSQ (2018-03-13),

4. 9589791 - Compound finFET device including oxidized III-V fin isolator (2017-03-07),

5. 9558930 - Mixed lithography approach for e-beam and optical exposure using HSQ (2017-01-31),

6. 9548355 - Compound finFET device including oxidized III-V fin isolator (2017-01-17),

7. 9548238 - Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same (2017-01-17),

8. 9508640 - Multiple via structure and method (2016-11-29),

9. 9385122 - Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same (2016-07-05),

10. 9240326 - Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact (2016-01-19),

11. 9184290 - Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer (2015-11-10),

12. 9177956 - Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture (2015-11-03),

13. 9059205 - Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same (2015-06-16),

14. 9059095 - Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact (2015-06-16),

Title: The Innovative Mind of Szu-Lin Cheng

Introduction: Szu-Lin Cheng, a talented inventor based in Yorktown Heights, NY, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Szu-Lin Cheng holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Szu-Lin Cheng has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Throughout his career, Szu-Lin Cheng has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Szu-Lin Cheng's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.

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3 patents pending:

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