The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Nov. 23, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Szu-Lin Cheng, Yorktown Heights, NY (US);

Isaac Lauer, Yorktown Heights, NY (US);

Kuen-Ting Shiu, Yorktown Heights, NY (US);

Jeng-Bang Yau, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02455 (2013.01); H01L 21/02538 (2013.01); H01L 21/02614 (2013.01); H01L 21/30604 (2013.01);
Abstract

A semiconductor device includes a wafer having a bulk layer and a III-V buffer layer on an upper surface of the bulk layer. The semiconductor device further includes at least one semiconductor fin on the III-V buffer layer. The semiconductor fin includes a III-V channel portion. Either the wafer or the semiconductor fin includes an oxidized III-V portion interposed between the III-V channel portion and the III-V buffer layer to prevent current leakage to the bulk layer.


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