International Business Machines Corporation

Globalfoundries Inc.

Szu-Lin Cheng

Isaac Lauer

Jeng-Bang Yau

Jack Oon Chu

Kuen-Ting Shiu

Jeffrey W Sleight

Josephine B Chang

Michael A Guillorn

Gen Pei Lauer

Devendra K Sadana

Keith E Fogel

Cheng-Wei Cheng

Amlan Majumdar

Edward William Kiewra

Yanning Sun

A semiconductor device includes a first source/drain region a second source/drain region, and a gate region interposed between the first and second source/drain regions. At least one nanowire has a first end anchored to the first source/drain region and an opposing second end anchored to the second source/drain region such that the nanowire is suspended above the wafer in the gate region. At least one gate electrode is in the gate region. The gate electrode contacts an entire surface of the nanowire to define a gate-all-around configuration. At least one pair of oxidized spacers surrounds the at least one gate electrode to electrically isolate the at least one gate electrode from the first and second source/drain regions.

Internal spacer formation from selective oxidation for Fin-first wire-last replacement gate-all-around nanowire FET

Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET

In one aspect, a method of forming a wiring layer on a wafer is provided which includes: depositing a HSQ layer onto the wafer; cross-linking a first portion(s) of the HSQ layer using e-beam lithography; depositing a hardmask material onto the HSQ layer; patterning the hardmask using optical lithography, wherein the patterned hardmask covers a second portion(s) of the HSQ layer; patterning the HSQ layer using the patterned hardmask in a manner such that i) the first portion(s) of the HSQ layer remain and ii) the second portion(s) of the HSQ layer covered by the patterned hardmask remain, wherein by way of the patterning step trenches are formed in the HSQ layer; and filling the trenches with a conductive material to form the wiring layer on the wafer.

Mixed lithography approach for E-beam and optical exposure using HSQ

A semiconductor device includes a wafer having a bulk layer and a III-V buffer layer on an upper surface of the bulk layer. The semiconductor device further includes at least one semiconductor fin on the III-V buffer layer. The semiconductor fin includes a III-V channel portion. Either the wafer or the semiconductor fin includes an oxidized III-V portion interposed between the III-V channel portion and the III-V buffer layer to prevent current leakage to the bulk layer.

Compound finFET device including oxidized III-V fin isolator

Mixed lithography approach for e-beam and optical exposure using HSQ

A method for manufacturing a semiconductor device, comprises forming an organic planarization layer on a plurality of gates on a substrate, wherein the plurality of gates each include a spacer layer thereon, forming an oxide layer on the organic planarization layer, removing a portion of the oxide layer to expose the organic planarization layer, stripping the organic planarization layer to form a cavity, patterning a direct lithographically-patternable gap dielectric on at least one of the gates in the cavity, and depositing a conductive contact in a remaining portion of the cavity.

Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same

A method for forming a device with a multi-tiered contact structure includes forming first contacts in via holes down to a first level, forming a dielectric capping layer over exposed portions of the first contacts and forming a dielectric layer over the capping layer. Via holes are opened in the dielectric layer down to the capping layer. Holes are opened in the capping layer through the via holes to expose the first contacts. Contact connectors and second contacts are formed in the via holes such that the first and second contacts are connected through the capping layer by the contact connectors to form multi-tiered contacts.

Multiple via structure and method

A method for manufacturing a semiconductor device comprises growing a source/drain epitaxy region over a plurality of gates on a substrate, wherein a top surface of the source/drain epitaxy region is at a height above a top surface of each of the plurality of gates, forming at least one opening in the source/drain epitaxy region over a top surface of at least one gate, forming a silicide layer on the source/drain epitaxy region, wherein the silicide layer lines lateral sides of the at least one opening, depositing a dielectric layer on the silicide layer, wherein the dielectric layer is deposited in the at least one opening between the silicide layer on lateral sides of the at least one opening, etching the dielectric layer to form a contact area, and depositing a conductor in the contact area.

Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same

A photo-patternable dielectric material is provided to a structure which includes a substrate having at least one gate structure. The photo-patternable dielectric material is then patterned forming a plurality of sacrificial contact structures adjacent the at least one gate structure. A planarized middle-of-the-line dielectric material is then provided in which an uppermost surface of each of the sacrificial contact structures is exposed. Each of the exposed sacrificial contact structures is then removed providing contact openings within the planarized middle-of-the-line dielectric material. A conductive metal-containing material is formed within each contact opening.

Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact

The present disclosure provides a method to improve and control the source/drain extension profile, which is compatible with device scaling. First, a sacrificial layer portion interposed between a channel layer portion and an uppermost surface of a semiconductor substrate having trenches is laterally recessed to provide a lateral recess on each side of the sacrificial layer portion. After filling the lateral recesses and trenches with a doped semiconductor material, a source/drain extension region is formed by a subsequent anneal during which dopants in the doped semiconductor material diffuse into portions of the channel layer portion over the lateral recesses and portions of the semiconductor substrate adjacent the lateral recesses.

Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer

Field Effect Transistors (FETs), Integrated Circuit (IC) chips including the FETs, and a method of forming the FETs and IC. FET locations and adjacent source/drain regions are defined on a semiconductor wafer, e.g., a silicon on insulator (SOI) wafer. Source/drains are formed in source/drains regions. A stopping layer is formed on source/drains. Contact spacers are formed above gates. Source/drain contacts are formed to the stopping layer, e.g., after converting the stopping layer to silicide. The contact spacers separate source/drain contacts from each other.

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Yorktown Heights, NY, United States of America

Szu-Lin Cheng