The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Apr. 22, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Szu-lin Cheng, Yorktown Heights, NY (US);

Jack O. Chu, Manhasset Hills, NY (US);

Isaac Lauer, Yorktown Heights, NY (US);

Jeng-bang Yau, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/8238 (2006.01); H01L 21/283 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/76877 (2013.01); H01L 29/785 (2013.01); H01L 29/41775 (2013.01); H01L 29/665 (2013.01); H01L 29/66575 (2013.01);
Abstract

A photo-patternable dielectric material is provided to a structure which includes a substrate having at least one gate structure. The photo-patternable dielectric material is then patterned forming a plurality of sacrificial contact structures adjacent the at least one gate structure. A planarized middle-of-the-line dielectric material is then provided in which an uppermost surface of each of the sacrificial contact structures is exposed. Each of the exposed sacrificial contact structures is then removed providing contact openings within the planarized middle-of-the-line dielectric material. A conductive metal-containing material is formed within each contact opening.


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