The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 12, 2013
Globalfoundries Inc., Grand Cayman, KY;
Cheng-Wei Cheng, White Plains, NY (US);
Szu-Lin Cheng, Yorktown Heights, NY (US);
Keith E. Fogel, Hopewell Junction, NY (US);
Edward W. Kiewra, South Burlington, VT (US);
Amlan Majumdar, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Kuen-Ting Shiu, White Plains, NY (US);
Yanning Sun, Scarsdale, NY (US);
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
A method for forming a device with a multi-tiered contact structure includes forming first contacts in via holes down to a first level, forming a dielectric capping layer over exposed portions of the first contacts and forming a dielectric layer over the capping layer. Via holes are opened in the dielectric layer down to the capping layer. Holes are opened in the capping layer through the via holes to expose the first contacts. Contact connectors and second contacts are formed in the via holes such that the first and second contacts are connected through the capping layer by the contact connectors to form multi-tiered contacts.