Chungcheongbuk-do, South Korea

Sung Kun Park

This inventor holds 34 USPTO granted patents and 3 published patent applications, primarily in Nonvolatile Memory Devices. Top assignees: Skhynix Inc., Dongbu Hitek Co., Ltd., Magnachip Semiconductor, Inc.. Active years: 2007-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung Kun Park. Retrieved from https://idiyas.com/inventor/sung-kun-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 91.2

Average Co-Inventor Count = 1.3

ph-index = 4

Forward Citations = 89(Granted Patents)


Location History:

  • Chungbuk, KR (2012)
  • Cheongju, KR (2016)
  • Cheongju-si, KR (2007 - 2017)
  • Chungcheongbuk-do, KR (2015 - 2020)
  • Sejong-si, KR (2021 - 2022)
  • Icheon-si, KR (2023 - 2024)

Company Filing History:


Years Active: 2007-2025

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Areas of Expertise:
Nonvolatile Memory
Image Sensing
Semiconductor Fabrication
Charge Trap Memory
Flash Memory
MOS Transistors
Lateral Coupling
EEPROM Cells
Antifuse Memory
3D Transistors
Single-Layer Gates
High Voltage Devices
34 patents (USPTO):Explore Patents

Title: Innovations of Sung Kun Park in Semiconductor Memory Technology

Introduction: Sung Kun Park is a renowned inventor based in Chungcheongbuk-do, South Korea. With an impressive portfolio of 32 patents, he has significantly contributed to the field of semiconductor memory technology. His latest inventions focus on enhancing memory devices through innovative designs that reduce disturbances and improve functionality.

Latest Patents: Among his latest patents is a semiconductor memory device that features active regions designed to minimize disturbance. This device includes a second conductive-type first well and a second conductive-type third well, alongside a first conductive-type second well that accommodates a floating gate and a selection gate. The construction allows the floating gate to overlap with various active regions for optimized performance. Another notable invention is a non-volatile memory device comprised of a substrate with multiple asymmetrically shaped floating gates that are strategically arranged for effective utilization of the active region, showcasing Park's inventive approach to memory device design.

Career Highlights: Sung Kun Park has made significant strides in the semiconductor industry, having worked with leading companies such as SK Hynix Inc. and Dongbu Hitek Co., Ltd. His experience in these organizations has helped him acquire a wealth of knowledge that has undoubtedly influenced his innovative contributions to the field.

Collaborations: Park has collaborated with fellow inventors, including Nam Yoon Kim and Jung Hoon Kim, further enriching his research and development endeavors. These partnerships have enabled the exchange of ideas and techniques, fostering an environment conducive to innovation.

Conclusion: Sung Kun Park continues to be a pivotal figure in the advancement of semiconductor technology. His numerous patents reflect his dedication to pushing the boundaries of memory device functionality. As he progresses in his career, his contributions are likely to inspire future innovations in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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