Memory device and method of operation with sequential discharging of word lines

Abstract

Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell string including a plurality of memory cells coupled to a plurality of word lines, a peripheral circuit configured to perform an operation that applies an operating voltage to a selected word line and applying a pass voltage to unselected word lines, among the plurality of word lines, and an operation controller configured to control the peripheral circuit to perform, after the operation has been performed, a discharge operation that sequentially decreases voltages of the plurality of word lines that range from at least one central word line located in a central portion in relation to the memory cell string to a word line, among the plurality of word lines, located in an outermost portion in relation to the memory cell string, adjacent to a select line.