The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Oct. 09, 2023
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Sung Kun Park, Icheon-si, KR;

Jae Young Song, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01);
U.S. Cl.
CPC ...
H01L 29/42328 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); G11C 16/3427 (2013.01);
Abstract

A non-volatile memory device may include a substrate, a first floating gate, a second floating gate, a third floating gate and a fourth floating gate. The substrate may include an active region. The first to fourth floating gates may be formed on the substrate. The first to fourth floating gates may be radially arranged to be partially overlapped with the active region. The first floating gate and the third floating gate may face each other in a first direction. The first floating gate and the third floating gate may have asymmetrically planar shapes. The first floating gate and the second floating gate may face each other in a second direction substantially perpendicular to the first direction. The first floating gate and the second floating gate may have asymmetrically planar shapes. The third floating gate and the fourth floating gate may face each other in the second direction. The third floating gate and the fourth floating gate may have asymmetrically planar shapes. The fourth floating gate and the second floating gate may face each other in the first direction. The fourth floating gate and the second floating gate may have asymmetrically planar shapes.


Find Patent Forward Citations

Park, Sung. (2024). Non-volatile memory device (U.S. Patent No. 12080772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12080772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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