The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Jan. 05, 2017
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Sung Kun Park, Chungcheongbuk-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11548 (2017.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 23/522 (2006.01); H01L 27/11521 (2017.01); H01L 27/11556 (2017.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11548 (2013.01); H01L 21/76897 (2013.01); H01L 23/5223 (2013.01); H01L 27/11521 (2013.01); H01L 27/11556 (2013.01); H01L 29/40114 (2019.08); H01L 29/42328 (2013.01); H01L 29/45 (2013.01); H01L 29/66825 (2013.01); H01L 29/7885 (2013.01); H01L 21/28518 (2013.01); H01L 21/76816 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A nonvolatile memory device includes an active region extending in a first direction and including a source region and a drain region that are respectively disposed at both ends of the active region, a gate electrode pattern extending in a second direction and disposed between the source region and the drain region, wherein the second direction extends across the first direction, a gate insulation pattern disposed between the gate electrode pattern and the active region, a source contact plug and a drain contact plug respectively coupled to the source region and the drain region, and a coupling contact plug disposed over the gate electrode pattern and insulated from the gate electrode pattern.


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