IDiyas

For the Inventor, By the Inventor

Suwon-si, South Korea

Sung-eui Kim

USPTO Granted Patents = 13

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 106(Granted Patents)


Location History:

  • Cheju-do, KR (1997 - 1998)
  • Suwon, KR (2000)
  • Kyungki-do, KR (2002 - 2004)
  • Gyeonggi-do, KR (2004)
  • Suwon-si, KR (2005 - 2018)

Company Filing History:

goldMedal13 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1997-2018

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13 patents (USPTO):Explore Patents
1. 10037999 - Semiconductor device including landing pad for connecting substrate and capacitor (2018-07-31),
2. 9613966 - Semiconductor device (2017-04-04),
3. 9431476 - Semiconductor devices including capacitors and methods of manufacturing the same (2016-08-30),
4. 9349633 - Semiconductor devices and methods of manufacturing the same (2016-05-24),
5. 9330960 - Semiconductor devices including capacitors (2016-05-03),
6. 6914316 - Semiconductor trench isolation structure (2005-07-05),
7. 6893982 - Method for forming a thin film, methods for forming a gate electrode and transistor using the same, and a gate electrode manufactured using the same (2005-05-17),
8. 6723662 - Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride (2004-04-20),
9. 6717231 - Trench isolation regions having recess-inhibiting layers therein that protect against overetching (2004-04-06),
10. 6461937 - Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching (2002-10-08),
11. 6093622 - Isolation method of semiconductor device using second pad oxide layer (2000-07-25),
12. 5824594 - Integrated circuit device isolating methods including silicon spacers (1998-10-20),
13. 5677232 - Methods of fabricating combined field oxide/trench isolation regions (1997-10-14),
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