The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Dec. 08, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Dae-Ik Kim, Hwaseong-si, KR;
Sung-Eui Kim, Suwon-si, KR;
Hyoung-Sub Kim, Seongnam-si, KR;
Sung-Kwan Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device includes forming an isolation layer on a substrate, where an active pattern is defined, forming an insulating interlayer on the active pattern of the substrate and the isolation layer, removing portions of the insulating interlayer, the active pattern and the isolation layer to form a first recess, forming a first contact in the first recess on a first region of the active pattern exposed by the first recess, removing portions of the active pattern and the isolation layer in the first recess by performing an isotropic etching process, to form an enlarged first recess, and