The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Jul. 14, 2003
Eun-jung Yun, Seoul, KR;
Sung-eui Kim, Suwon-si, KR;
Eun-Jung Yun, Seoul, KR;
Sung-Eui Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A trench structure of a semiconductor device includes first and second regions of a substrate having first and second trenches, respectively, the first trench having an aspect ratio larger than that of the second trench, a first insulation material on a bottom and sidewalls of the first trench forming a first sub-trench in the first trench, a second insulation material completely filling the first sub-trench, a third insulation material formed on a bottom and sidewalls of the second trench forming a second sub-trench in the second trench, a fourth insulation material formed on a bottom and sidewalls of the second sub-trench, and a fifth insulation material completely filling a third sub-trench formed in the second sub-trench by the fourth insulation material.