The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Jul. 30, 2003
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/131 ; H01L 2/1469 ;
Abstract
Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with a reduced amount of chloride are disclosed. A gate oxide film is formed on a substrate on an active region adjacent to a trench isolation region in a first gas atmosphere with a first amount of chloride. The gate oxide film is annealed in a second gas atmosphere including a second amount of chloride that is greater than the first amount.
Lee, Kong-soo. (2004). Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride (U.S. Patent No. 6723662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6723662
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