The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jun. 05, 2014
Young-seung Cho, Yongin-si, KR;
Sung-eui Kim, Suwon-si, KR;
Ji-young Kim, Yongin-si, KR;
Hoon Jeong, Hwaseong-si, KR;
Chan-won Kim, Seoul, KR;
Jong-bom Seo, Seoul, KR;
Seung-jun Lee, Bucheon-si, KR;
Jun-soo Lee, Seoul, KR;
Young-Seung Cho, Yongin-si, KR;
Sung-Eui Kim, Suwon-si, KR;
Ji-Young Kim, Yongin-si, KR;
Hoon Jeong, Hwaseong-si, KR;
Chan-Won Kim, Seoul, KR;
Jong-Bom Seo, Seoul, KR;
Seung-Jun Lee, Bucheon-si, KR;
Jun-Soo Lee, Seoul, KR;
Abstract
A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.