Sundaravadivel Rajarajan

Title: Innovations of Sundaravadivel Rajarajan

Introduction

Sundaravadivel Rajarajan is a notable inventor based in South Jordan, UT (US). He has made significant contributions to the field of memory technology, holding a total of 6 patents. His work focuses on enhancing the performance and reliability of memory devices.

Latest Patents

One of his latest patents is titled "Spike current suppression in a memory array." This invention involves systems, methods, and apparatus related to spike current suppression in a memory array. In this approach, a memory device features a memory array with a cross-point memory architecture. The memory array includes access lines that are split into left and right portions, each connected to a single via. This design allows a driver to generate a voltage on the access line while reducing electrical discharge associated with current spikes through the use of resistors.

Another significant patent is "Charge screening structure for spike current suppression in a memory array." This invention also addresses spike current suppression in a memory array. The memory device includes a memory array with access lines that have left and right portions. Charge screening structures are integrated into the access line to enhance resistance and suppress spike current during memory cell selection.

Career Highlights

Sundaravadivel Rajarajan is currently employed at Micron Technology Incorporated, where he continues to innovate in the field of memory technology. His work has contributed to advancements in memory device architecture and performance.

Collaborations

He has collaborated with notable coworkers, including Srivatsan Venkatesan and Iniyan Soundappa Elango, who have also contributed to the field of memory technology.

Conclusion

Sundaravadivel Rajarajan's innovative work in memory technology, particularly in spike current suppression, showcases his expertise and commitment to advancing the field. His contributions are significant in enhancing the reliability and performance of memory devices.