The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Aug. 27, 2021
Micron Technology, Inc., Boise, ID (US);
Sateesh Talasila, Draper, UT (US);
Chandrasekhar Mandalapu, Lehi, UT (US);
Robert Douglas Cassel, Lehi, UT (US);
Sundaravadivel Rajarajan, South Jordan, UT (US);
Iniyan Soundappa Elango, Lehi, UT (US);
Srivatsan Venkatesan, Sandy, UT (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Systems, methods, and apparatus related to spike current suppression in a memory array. In one approach, a memory device includes a memory array having a cross-point memory architecture. The memory array has access lines (e.g., word lines and/or bit lines) configured to access memory cells of the memory array. Each access line is formed of a conductive material (e.g., tungsten). The access line includes one or more resistive layers (e.g., tungsten silicon nitride) each having a resistivity greater than the resistivity of the conductive material used to form the access line. The resistive layers are formed overlying or underlying at least a portion of the memory cells. A driver is electrically connected to the access line using a via. The driver generates a voltage on the access line to access the memory cells.