Sateesh Talasila

Title: Sateesh Talasila: Innovator in Memory Technology

Introduction

Sateesh Talasila is a notable inventor based in Draper, UT (US). He has made significant contributions to the field of memory technology, particularly through his innovative patent.

Latest Patents

Sateesh holds a patent titled "Access line having a resistive layer for memory cell access - Systems, methods, and apparatus related to spike current suppression in a memory array." This patent describes a memory device that includes a memory array with a cross-point memory architecture. The memory array features access lines, such as word lines and bit lines, designed to access memory cells. Each access line is constructed from a conductive material, like tungsten, and incorporates one or more resistive layers, such as tungsten silicon nitride, which have a higher resistivity than the conductive material. These resistive layers are strategically placed over or under portions of the memory cells. A driver is connected to the access line via a via, generating a voltage to access the memory cells.

Career Highlights

Sateesh Talasila is currently employed at Micron Technology Incorporated, where he continues to advance memory technology. His work has been instrumental in developing innovative solutions that enhance memory device performance.

Collaborations

Sateesh has collaborated with notable colleagues, including Chandrasekhar Mandalapu and Robert Douglas Cassel, contributing to various projects within the field.

Conclusion

Sateesh Talasila's contributions to memory technology through his patent and work at Micron Technology Incorporated highlight his role as an innovator in the industry. His advancements are paving the way for future developments in memory devices.