The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Sep. 13, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sundaravadivel Rajarajan, South Jordan, UT (US);

Srivatsan Venkatesan, Sandy, UT (US);

Iniyan Soundappa Elango, Lehi, UT (US);

Robert Douglas Cassel, Lehi, UT (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06F 3/06 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G06F 3/0616 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); H10B 63/80 (2023.02); H10N 70/041 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/882 (2023.02);
Abstract

Systems, methods, and apparatus related to spike current suppression in a memory array. In one approach, a memory device includes a memory array having a cross-point memory architecture. The memory array has access lines (e.g., word lines and/or bit lines) configured to access memory cells of the memory array. Each access line is split into left and right portions. Each portion is electrically connected to a single via, which a driver uses to generate a voltage on the access line. To reduce electrical discharge associated with current spikes, a first resistor is located between the left portion and the via, and a second resistor is located between the right portion and the via.


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