Location History:
- Monsey, NY (US) (1989)
- Valley Cottage, NY (US) (1990)
- Millwood, NY (US) (1992)
- Fishkill, NY (US) (1997 - 2000)
- Wappingers Falls, NY (US) (2001 - 2002)
- Beacon, NY (US) (2001 - 2005)
Company Filing History:
13 out of 164,197 
1 out of 13,713 
Years Active: 1989-2005
Title: The Innovations of Stephen Bruce Brodsky
Introduction
Stephen Bruce Brodsky is a notable inventor based in Fishkill, NY (US). He holds a total of 13 patents, showcasing his significant contributions to the field of technology and engineering. His work primarily focuses on advancements in semiconductor devices and materials.
Latest Patents
One of his latest patents is titled "Sputtered tungsten diffusion barrier for improved interconnect robustness." This invention describes a method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via through non-collimated sputter deposition. The sputter chamber is configured with a pressure ranging from about 1 mTorr to about 10 mTorr, with an inert gas flow of at least 25 cm/min to about 150 cm/min. The shielding inside the chamber is coated with aluminum oxide, which promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may also be included prior to the deposition of the tungsten film. This method enhances the robustness of diffusion barriers by increasing the target to substrate distance and reducing the heating effect associated with traditional collimated sputtering.
Another significant patent is the "Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly." This invention provides a sub-0.1 µm MOSFET device that minimizes poly depletion and features salicided source and drain junctions along with very low sheet resistance poly-gates. The process utilizes a damascene-gate method where the source and drain implantation activation annealing and silicidation occur in the presence of a dummy gate region, which is later removed and replaced with a polysilicon gate region.
Career Highlights
Throughout his career, Stephen Bruce Brodsky has worked with prominent companies such as IBM and Applied Materials, Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.
Collaborations
Stephen has collaborated with notable individuals in the field, including Richard Anthony Conti and Seshadri Subbanna. These collaborations have further enriched his work and led to significant technological advancements.
Conclusion
Stephen Bruce Brodsky's contributions to the field of technology through his patents and collaborations highlight his innovative spirit and dedication to