The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
May. 08, 2001
Stephen B. Brodsky, Beacon, NY (US);
William J. Murphy, Essex Junction, VT (US);
Matthew J. Rutten, Milton, VT (US);
David C. Strippe, Westford, VT (US);
Daniel S. Vanslette, Fairfax, VT (US);
Stephen B. Brodsky, Beacon, NY (US);
William J. Murphy, Essex Junction, VT (US);
Matthew J. Rutten, Milton, VT (US);
David C. Strippe, Westford, VT (US);
Daniel S. Vanslette, Fairfax, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least 25 cm/min to about 150 cm/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.