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For the Inventor, By the Inventor

Milton, VT, United States of America

Matthew J Rutten

USPTO Granted Patents = 23

Average Co-Inventor Count = 3.5

ph-index = 13

Forward Citations = 640(Granted Patents)


Company Filing History:

goldMedal23 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1994-2005

where 'Filed Patents' based on already Granted Patents

23 patents (USPTO):
1. 6838364 - Sputtered tungsten diffusion barrier for improved interconnect robustness (2005-01-04),
2. 6503827 - Method of reducing planarization defects (2003-01-07),
3. 6495917 - Method and structure of column interconnect (2002-12-17),
4. 6245668 - Sputtered tungsten diffusion barrier for improved interconnect robustness (2001-06-12),
5. 6171436 - Apparatus for removing slurry particles (2001-01-09),
6. 6110832 - Method and apparatus for slurry polishing (2000-08-29),
7. 6071803 - Electrical contact to buried SOI structures (2000-06-06),
8. 6008083 - Precision analog metal-metal capacitor (1999-12-28),
9. 5928062 - Vertical polishing device and method (1999-07-27),
10. 5913713 - CMP polishing pad backside modifications for advantageous polishing (1999-06-22),
11. 5896870 - Method of removing slurry particles (1999-04-27),
12. 5889293 - Electrical contact to buried SOI structures (1999-03-30),
13. 5877589 - Gas discharge devices including matrix materials with ionizable gas (1999-03-02),
14. 5876266 - Polishing pad with controlled release of desired micro-encapsulated (1999-03-02),
15. 5722879 - Variable travel carrier device and method for planarizing semiconductor (1998-03-03),

Title: Innovative Contributions of Matthew J Rutten in Semiconductor Technology

Introduction

Matthew J Rutten, a prominent inventor based in Milton, Vermont, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 23 patents, Rutten is recognized for his innovative approaches that enhance device manufacturing processes.

Latest Patents

Among Rutten's latest inventions is the "Sputtered tungsten diffusion barrier for improved interconnect robustness." This patent outlines a method for forming inter-level contacts or vias between metal layers utilizing a tungsten film deposited via non-collimated sputter deposition. The innovative process operates under specific pressure conditions and inert gas flow rates, significantly improving the robustness of diffusion barriers. Another notable patent is the "Method of reducing planarization defects," which addresses the replication of unwanted defects during semiconductor device manufacturing. By removing a sacrificial layer before subsequent layer formation, his method effectively enhances the quality of the final product.

Career Highlights

Matthew J Rutten is currently associated with International Business Machines Corporation (IBM), where he continues to drive advancements in semiconductor technologies. His work has not only pushed the boundaries of current manufacturing techniques but has also paved the way for improved device performance and reliability.

Collaborations

Throughout his career, Rutten has collaborated with notable peers such as Terrance M Wright and John Edward Cronin. These partnerships signify the collaborative nature of innovation in technology, where shared expertise leads to groundbreaking advancements.

Conclusion

Matthew J Rutten stands out as a leading inventor in the semiconductor industry, with a robust patent portfolio and a commitment to improving manufacturing processes. His latest patents reflect his dedication to innovation and his role in shaping the future of semiconductor technology.

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