The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 1992

Filed:

Oct. 31, 1990
Applicant:
Inventors:

Stephen B Brodsky, Millwood, NY (US);

Rajiv V Joshi, Yorktown Heights, NY (US);

John S Lechaton, Wappingers Falls, NY (US);

James G Ryan, Essex Junction, VT (US);

Dominic J Schepis, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437190 ; 437 31 ; 437160 ; 437192 ; 148D / ; 148D / ; 357 67 ;
Abstract

A contact is provided in a self-aligned manner to a doped region a semiconductor substrate by first forming a layer of a transition metal-boride compound over a selected region on the substrate. A layer of a transition metal-nitride compound is formed over the layer of transition metal-boride compound, and the structure is heated to drive dopant from the layer of transition metal-boride compound into the substrate. The transition metal-boride/transition metal nitride layers are patterned to leave a contact to the doped region.


Find Patent Forward Citations

Brodsky, Stephen. (1992). Method of making semiconductor device contact including transition (U.S. Patent No. 5086016). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5086016

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…