The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Sep. 28, 2000
Applicant:
Inventors:
Diane Catherine Boyd, Lagrangeville, NY (US);
Stephen Bruce Brodsky, Wappingers Falls, NY (US);
Hussein Ibrahim Hanafi, Basking Ridge, NJ (US);
Ronnen Andrew Roy, Ossinging, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A sub-0.1 &mgr;m MOSFET device having minimum poly depletion, salicided source and drain junctions and very low sheet resistance poly-gates is provided utilizing a damascene-gate process wherein the source and drain implantation activation annealing and silicidation occurs in the presence of a dummy gate region which is thereafter removed and replaced with a polysilicon gate region.