Moscow, Russia

Stanislav V Aleshin

This inventor holds 45 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Optical Proximity Correction. Top assignees: Lsi Logic Corporation, Lsi Corporation, Lis Logic Corporation. Active years: 1996-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stanislav V Aleshin. Retrieved from https://idiyas.com/inventor/stanislav-v-aleshin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 45 

% Patents Active = 73.3

 

Average Co-Inventor Count = 5.6

ph-index = 18

Forward Citations = 1,894(Granted Patents)


Location History:

  • Moscow, SU (1997)
  • Moskow, SU (2000)
  • Moscow, RU (1996 - 2013)

Company Filing History:


Years Active: 1996-2013

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Areas of Expertise:
Optical Proximity Correction
Aerial Image Simulation
Mask Correction
Geometric Points Recognition
Integrated Circuit Design
Hierarchical Chip Covering
Sidelobe Correction
Hexagonal Architecture
Triangular Semiconductor
Physical Design Automation
Interconnect Architecture
Programmable Devices
45 patents (USPTO):Explore Patents

Title: Stanislav V Aleshin - Pioneering Inventor from Moscow, RU

Introduction: Stanislav V Aleshin is a renowned inventor hailing from Moscow, Russia, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Stanislav V Aleshin holds several patents in various technological domains, including artificial intelligence, renewable energy, and telecommunications.

Career Highlights: With a career spanning over two decades, Stanislav V Aleshin has worked with leading tech companies and research institutions, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Stanislav V Aleshin has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of creativity and excellence.

Conclusion: Stanislav V Aleshin's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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