Lsi Logic Corporation

Lsi Corporation

Lis Logic Corporation

Stanislav V Aleshin

Ranko L Scepanovic

James S Koford

Alexander E Andreev

Alexander S Podkolzin

Edwin R Jones

Valeriy B Kudryavtsev

Michael D Rostoker

Gobi R Padmanahben

Ashok K Kapoor

Sergei Rodin

Marina Igorevna Medvedeva

Marina M Medvedeva

Valeriv B Kudryavtsev

Eugeni E Egorov

Evgueny E Egorov

Dusan Petranovic

Nadya Strelkova

Jaroslav V Kalinin

Edward M Roseboom

Ilya Golubtsov

Sergey V Uzhakov

Genadij V Belokopitov

Ivan Leonidovich Mazurenko

Andrey Nikitin

Douglas B Boyle

Paul G Filseth

Ilya Viktorovich Lyalin

Denis Vassilevich Parfenov

Dmitry Nikolaevich Babin

Mikhail Grinchuk

Sergei Gashov

Valeriy B Kudryavstev

Ashook K Kapoor

Gennady V Belokopytov

Valeriy B Kudryvavtsev

Sergel Rodin

Valerity B Kudryavtsev

Evgenij Egorov

Marina G Medvedeva

Yaroslav V Kalinin

Sergei B Rodin

An adaptive filter configured to use multiple algorithm species that differ in the quality of echo suppression and respective burdens imposed on the computational resources of the host communication device. Depending on the available computational budget, the adaptive filter selects an algorithm species that, while supporting a relatively high quality of echo suppression, involves a relatively low risk of overwhelming the computational resources. The adaptive filter monitors changes in the available computational budget and, if appropriate or necessary, can change the algorithm species to maintain a quality of echo suppression that is optimal for the current computational budget. If a change of the algorithm species is initiated, then at least a portion of internal algorithm data from the previously running algorithm species might be transferred for use in the subsequent algorithm species.

Adaptive filtering with flexible selection of algorithm complexity and performance

A method and system is provided for automatically recognizing geometric points of features in a target design for OPC mask quality calculation. For each feature in the target design, x, y points comprising the feature are traversed and each neighboring pair of points is connected to define respective segments, wherein a set of contiguous segments form a step if the x values of the segments/points all increase or decrease and the same is true for the y values. Physical characteristics of the segments of the respective features are determined by comparing lengths of the segments to one another and to threshold values. Locations of quality measuring points are then determined along particular ones of the segments based on the physical characteristics.

Automatic recognition of geometric points in a target IC design for OPC mask quality calculation

A method and system for improving aerial image simulation speeds. The method includes receiving a mask; generating a matrix of node values based on the mask, wherein each node value corresponds to a node of a plurality of nodes in a lattice; performing a one-dimensional (1-D) approximation of a plurality of first approximation values at corresponding first approximation points between pairs of nodes of the plurality of nodes; performing a two-dimensional (2-D) approximation of second approximation values at corresponding second approximation points between pairs of first approximation points, wherein Chebyshev polynomials are used to approximate the first approximation values and the second approximation values. According to the method and system disclosed herein, approximating values using Chebyshev polynomials results in high-resolution aerial images that are generated at faster speeds.

Method and system for improving aerial image simulation speeds

The present invention is directed to a method and apparatus for optimizing fragmentation of integrated circuit boundaries for optical proximity correction (OPC) purposes. The present invention may balance the number of vertices and the 'flexibility' of the boundary and may recover fragmentation according to the process intensity profile along the ideal edge position to obtain the best decision for OPC.

Method and apparatus for optimizing fragmentation of boundaries for optical proximity correction (OPC) purposes

The present invention provides a method and system for analyzing the quality of an OPC mask. The method includes receiving a target layer from a target design, receiving an OPC mask layer from the OPC mask. The method also includes classifying each cell of at least one of the target layer and the OPC mask layer as either repeating or non-repeating, and for each repeating cell, recognizing geometric points in the target layer to determine quality measuring groups. The method also includes simulating the OPC mask layer based on the quality measuring groups, measuring edge placement errors (EPEs) based on at least one of the geometric points, and providing an EPE layer representing EPEs greater than an EPE threshold.

Method and system for analyzing the quality of an OPC mask

A method and system is provided for performing edge correction on a mask design. Aspects of the invention include initially fragmenting boundaries of the mask design for optical proximity correction, whereby edge segments of the boundaries are moved by a distance value; interpreting the moved edge segments by defining a new endpoint for respective pairs of neighboring edge segments that meet at an angle, the endpoint being a location of where lines on which the edge segments lie intersect, wherein the new endpoint is used to create a smoothed feature, resulting in a smoothed OPC mask; calculating distances between all pairs of comparable edge segments of the smoothed OPC mask; comparing the distances to a design rule limit; for each edge segment having a distance that exceeds the design rule limit, decreasing the segment's distance value; and optimizing the mask design by repeating the above steps until no distance violations are found.

OPC edge correction based on a smoothed mask design

The present invention is directed to a method and apparatus for making mask edge corrections using a gradient method for high density chip designs. The present invention uses a newly defined cost function.

Gradient method of mask edge correction

A method of measuring the quality of a simulated aerial image includes receiving as input a mask pattern for a chip design, simulating an aerial image of the mask pattern, calculating an error area representative of a deviation between an ideal boundary of the chip design and a boundary of the simulated aerial image, calculating maximum and average end-of-line deviations between the ideal boundary of the chip design and the boundary of the simulated aerial image, and displaying a worst quality area in the simulated aerial image as a function of the error area and the maximum and average end-of-line deviations for visual inspection.

Quality measurement of an aerial image

Local images of photolithographic masks are assigned to classes based on similarity of functions of circuits formed by the images, so that all of the images of a class can be corrected by correcting one of the members. Boundaries of photolithographic masks are corrected for diffusion of light by moving regions based on process light intensity and proximity of close connections. Boundaries are also corrected for shifting of photoactive material in photoresists by calculating the amount of shift based on light intensities at pattern points.

Mask correction for photolithographic processes

A method and system for simply and efficiently correcting sidelobe formation is disclosed. The method for reducing sidelobe formation in an aerial image created from an attenuated phase shift mask used in photolithography includes the steps of: a) generating a density map for an input design having a set of nodes identified as being outside of a periphery of the input design; b) examining the aerial image using the density map to compare an image intensity of the aerial image at a plurality of locations, each location corresponding to one node of the set of nodes; c) marking a node of the density map when the image intensity at the corresponding location of the aerial image satisfies a threshold intensity criterion and a separation distance criterion to create a set of marked nodes; and d) masking each node of the set of marked nodes.

Sidelobe correction for attenuated phase shift masks

A method and system for performing optical proximity correction (OPC) on an integrated circuit (IC) chip design is disclosed. The system and method of the present invention includes exploding calls on an element list to generate an expanded element list, defining a local cover area for each call on the expanded element list, classifying congruent local cover areas into corresponding groups, and performing an OPC procedure for one local cover area in each group By defining the local cover area for each call and grouping congruent local cover areas, only one OPC procedure (e.g., evaluation and correction) needs to be performed per group of congruent local cover areas. The amount of data to be evaluated and the number of corrections performed is greatly reduced because OPC is not performed on repetitive portions of the IC chip design, thereby resulting in significant savings in computing resources and time.

Method and system for constructing a hierarchy-driven chip covering for optical proximity correction

An optical proximity correction system for local correction of an aerial image produced from a mask having transmissive portions and blocking portions collectively defining a target design includes an analyzer to match one or more segments of the target design to one or more typical case segments from a predetermined set of typical case segments; a controller, coupled to the analyzer, for approximating each of the one or more segments of the target design with matching typical case segments from the set of typical case segments to produce an adjusted aerial image. The method for optical proximity correction using local correction of an aerial image produced from a mask having transmissive portions and blocking portions collectively defining a target design, includes: a) analyzing the target design to produce one or more segments from the target design and to match the one or more segments to one or more typical case segments from a predetermined set of typical case segments; and b) approximating each of the one or more segments of the target design with the matching typical case segments from the set of typical case segments to produce an adjusted aerial image.

First approximation for OPC significant speed-up

The present invention is directed to an optical proximity correction driven hierarchy. A method for constructing a hierarchy of optically independent structures for use in optical proximity correction of a circuit may include receiving an integrated circuit design, the design including geometric circuit elements for providing circuit functions of an integrated circuit. At least a portion of the integrated circuit design is exploded and geometric circuit elements of the exploded integrated circuit design are gathered into optically independent classes. A search is then performed for congruency for each optically independent class.

Optical proximity correction driven hierarchy

A method of finding an optically periodic structure in a cell layer of an integrated circuit design includes receiving as input a physical representation of a cell layer of an integrated circuit design, finding reference coordinates of a selected portion of the cell layer from the physical representation of a cell layer, selecting an initial element located nearest to the reference coordinates, and constructing a base structure that includes the initial element and a minimum number of elements in the physical representation of the cell layer wherein the base structure may be replicated at an X-offset and a Y-offset to fill the entire selected portion so that for each element in each replica of the base structure there is an identical element at identical coordinates in the physical representation of the cell layer.

Automatic recognition of an optically periodic structure in an integrated circuit design

Growing community of inventors

Moscow, Russia

Stanislav V Aleshin