The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Sep. 30, 2005
Ilya Golubtsov, Moscow, RU;
Stanislav V. Aleshin, Moscow, RU;
Ranko Scepanovic, San Jose, CA (US);
Sergei Rodin, Moscow, RU;
Marina Medvedeva, Moscow, RU;
Sergey V. Uzhakov, Moscow, RU;
Evgueny E. Egorov, Moscow, RU;
Nadya Strelkova, Gresham, OR (US);
Ilya Golubtsov, Moscow, RU;
Stanislav V. Aleshin, Moscow, RU;
Ranko Scepanovic, San Jose, CA (US);
Sergei Rodin, Moscow, RU;
Marina Medvedeva, Moscow, RU;
Sergey V. Uzhakov, Moscow, RU;
Evgueny E. Egorov, Moscow, RU;
Nadya Strelkova, Gresham, OR (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
The present invention provides a method and system for analyzing the quality of an OPC mask. The method includes receiving a target layer from a target design, receiving an OPC mask layer from the OPC mask. The method also includes classifying each cell of at least one of the target layer and the OPC mask layer as either repeating or non-repeating, and for each repeating cell, recognizing geometric points in the target layer to determine quality measuring groups. The method also includes simulating the OPC mask layer based on the quality measuring groups, measuring edge placement errors (EPEs) based on at least one of the geometric points, and providing an EPE layer representing EPEs greater than an EPE threshold.