Clifton Park, NY, United States of America

Stan Tsai

This inventor holds 7 USPTO granted patents and 2 published patent applications. Top assignees: Globalfoundries Inc., International Business Machines Corporation, Globalfoundries U.S. Inc.. Active years: 2017-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stan Tsai. Retrieved from https://idiyas.com/inventor/stan-tsai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

% Patents Active = 57.1

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 36(Granted Patents)


Location History:

  • Clifton Park, NY (US) (2017 - 2020)
  • Ballston Lake, NY (US) (2022)

Company Filing History:


Years Active: 2017-2022

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Stan Tsai

Introduction

Stan Tsai is a prominent inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on improving semiconductor structures and manufacturing methods, which are crucial for the advancement of electronic devices.

Latest Patents

Among his latest patents, one notable invention is related to contact structures. This patent discusses semiconductor structures and methods of manufacture, including the process of recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization. The method also involves planarizing the metallization overburden to a level of the adjacent gate structures and forming source/drain contacts to the source/drain metallization.

Another significant patent by Stan Tsai addresses gate height control and interlayer dielectric (ILD) protection. This invention outlines methods for forming a semiconductor device and resulting structures that enhance gate height control while providing ILD protection during replacement metal gate processes. The method includes forming a semiconductor fin on a substrate, creating a sacrificial gate over a channel region, and forming an oxide hard mask on the sacrificial gate's surface.

Career Highlights

Stan Tsai has worked with leading companies in the semiconductor industry, including GlobalFoundries Inc. and International Business Machines Corporation (IBM). His experience in these organizations has allowed him to develop innovative solutions that address complex challenges in semiconductor manufacturing.

Collaborations

Throughout his career, Stan has collaborated with talented individuals such as Ruilong Xie and John Ryan Sporre. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Stan Tsai's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry and drive innovation forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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