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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11257718 B1

PDFFull Text
Date of Patent:
Feb. 22, 2022

Filed:

Feb. 03, 2020

Contact structures

Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Chanro Park, Clifton Park, NY (US);

Stan Tsai, Ballston Lake, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:

Francois Pagette

Andrew M. Calderon

Roberts Calderon Safran & Cole, P.C.

Primary Examiner:

Mark W Tornow

Assistant Examiner:

Priya M Rampersaud

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 27/088 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 21/285 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/31116 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 27/088 (2013.01); H01L 29/0649 (2013.01); H01L 29/45 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/76843 (2013.01); H01L 29/0847 (2013.01); H01L 29/41783 (2013.01); H01L 29/665 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The method includes: recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization; planarizing the metallization overburden to a level of the adjacent gate structures; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.

Find Patent Forward Citations

Park, Chanro. (2022). Contact structures (U.S. Patent No. 11257718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11257718

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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